324 complete experiment

3.3.4-semiconductor-hall-effect/data/VoA_101.csv

@@ -0,0 +1,13 @@
+I_m[mA],U_34[mV]
+0,0.031
+70,0.02
+140,0.008
+300,-0.02
+460,-0.05
+590,-0.073
+750,-0.099
+900,-0.12
+1040,-0.135
+1130,-0.144
+1320,-0.157
+1470,-0.166

3.3.4-semiconductor-hall-effect/data/VoA_13.csv

@@ -0,0 +1,13 @@
+I_m[mA],U_34[mV]
+0,0.002
+70,0.001
+150,0.000
+230,-0.002
+410,-0.007
+620,-0.011
+780,-0.015
+1050,-0.019
+1160,-0.020
+1290,-0.021
+1400,-0.022
+1580,-0.023

3.3.4-semiconductor-hall-effect/data/VoA_24.csv

@@ -0,0 +1,16 @@
+I_m[mA],U_34[mV]
+0,0.006
+70,0.002
+140,0
+240,-0.004
+310,-0.007
+450,-0.012
+570,-0.018
+720,-0.024
+850,-0.029
+940,-0.032
+1100,-0.035
+1200,-0.038
+1310,-0.040
+1440,-0.041
+1510,-0.042

3.3.4-semiconductor-hall-effect/data/VoA_35.csv

@@ -0,0 +1,15 @@
+I_m[mA],U_34[mV]
+0,0.009
+70,0.005
+140,0
+270,-0.007
+370,-0.013
+520,-0.023
+680,-0.032
+810,-0.039
+950,-0.046
+1070,-0.050
+1170,-0.052
+1270,-0.055
+1420,-0.058
+1500,-0.060

3.3.4-semiconductor-hall-effect/data/VoA_46.csv

@@ -0,0 +1,14 @@
+I_m[mA],U_34[mV]
+0,0.013
+70,0.007
+140,0.001
+300,-0.011
+430,-0.022
+570,-0.034
+740,-0.046
+900,-0.056
+1040,-0.063
+1150,-0.068
+1290,-0.072
+1400,-0.075
+1500,-0.078

3.3.4-semiconductor-hall-effect/data/VoA_57.csv

@@ -0,0 +1,14 @@
+I_m[mA],U_34[mV]
+0,0.016
+70,0.01
+140,0.003
+310,-0.014
+420,-0.026
+530,-0.037
+660,-0.05
+880,-0.068
+1030,-0.077
+1160,-0.084
+1300,-0.089
+1420,-0.093
+1500,-0.096

3.3.4-semiconductor-hall-effect/data/VoA_68.csv

@@ -0,0 +1,15 @@
+I_m[mA],U_34[mV]
+0,0.02
+70,0.012
+140,0.004
+250,-0.008
+350,-0.021
+470,-0.036
+590,-0.050
+710,-0.063
+840,-0.077
+950,-0.085
+1100,-0.095
+1270,-0.104
+1420,-0.110
+1500,-0.113

3.3.4-semiconductor-hall-effect/data/VoA_79.csv

@@ -0,0 +1,15 @@
+I_m[mA],U_34[mV]
+0,0.024
+80,0.014
+140,0.005
+280,-0.014
+420,-0.034
+560,-0.053
+730,-0.075
+870,-0.091
+980,-0.101
+1060,-0.108
+1180,-0.116
+1270,-0.121
+1380,-0.126
+1500,-0.130

3.3.4-semiconductor-hall-effect/data/VoA_90.csv

@@ -0,0 +1,14 @@
+I_m[mA],U_34[mV]
+0,0.028
+70,0.018
+140,0.007
+260,-0.012
+410,-0.037
+540,-0.057
+670,-0.077
+810,-0.097
+950,-0.113
+1080,-0.124
+1250,-0.136
+1360,-0.143
+1490,-0.150

3.3.4-semiconductor-hall-effect/data/VoA_rev_101.csv

@@ -0,0 +1,14 @@
+I_m[mA],U_34[mV]
+0,0.039
+70,0.049
+140,0.062
+240,0.081
+380,0.105
+550,0.136
+750,0.169
+900,0.190
+1030,0.204
+1170,0.217
+1330,0.228
+1400,0.231
+1470,0.234

3.3.4-semiconductor-hall-effect/data/induction_on_amperage.csv

@@ -0,0 +1,19 @@
+Ind[mT],I[mA]
+58,40
+110,90
+165,150
+235,220
+304,290
+363,350
+428,420
+502,490
+575,580
+648,660
+732,760
+783,830
+858,950
+893,1030
+944,1150
+990,1280
+1046,1470
+1065,1580

3.3.4-semiconductor-hall-effect/data/process.md

@@ -0,0 +1,16 @@
+## 1. Подготовка приборов к работе
+
+Передельный ток и напряжение через электромагнит:
+
+I = 1.59 А
+
+U = 115.6 В
+
+## 2. Измерение зависимости U34 от тока через магнит Im
+
+Ток через образец (прямое направление -- 3 в "+", 4 в "-":
+
+`I = [13, 24, 35, 46, 57, 68, 79, 90, 101]`
+
+Чтобы перевести в мА нужно умножить на 1.5/155 (цена деления 1)
+