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324 complete experiment
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parent
a596659ed1
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13
3.3.4-semiconductor-hall-effect/data/VoA_101.csv
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3.3.4-semiconductor-hall-effect/data/VoA_101.csv
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I_m[mA],U_34[mV]
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0,0.031
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70,0.02
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140,0.008
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300,-0.02
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460,-0.05
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590,-0.073
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750,-0.099
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900,-0.12
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1040,-0.135
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1130,-0.144
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1320,-0.157
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1470,-0.166
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3.3.4-semiconductor-hall-effect/data/VoA_13.csv
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3.3.4-semiconductor-hall-effect/data/VoA_13.csv
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I_m[mA],U_34[mV]
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0,0.002
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70,0.001
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150,0.000
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230,-0.002
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410,-0.007
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620,-0.011
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780,-0.015
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1050,-0.019
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1160,-0.020
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1290,-0.021
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1400,-0.022
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1580,-0.023
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3.3.4-semiconductor-hall-effect/data/VoA_24.csv
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3.3.4-semiconductor-hall-effect/data/VoA_24.csv
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I_m[mA],U_34[mV]
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0,0.006
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70,0.002
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140,0
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240,-0.004
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310,-0.007
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450,-0.012
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570,-0.018
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720,-0.024
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850,-0.029
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940,-0.032
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1100,-0.035
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1200,-0.038
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1310,-0.040
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1440,-0.041
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1510,-0.042
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3.3.4-semiconductor-hall-effect/data/VoA_35.csv
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3.3.4-semiconductor-hall-effect/data/VoA_35.csv
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I_m[mA],U_34[mV]
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0,0.009
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70,0.005
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140,0
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270,-0.007
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370,-0.013
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520,-0.023
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680,-0.032
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810,-0.039
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950,-0.046
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1070,-0.050
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1170,-0.052
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1270,-0.055
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1420,-0.058
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1500,-0.060
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3.3.4-semiconductor-hall-effect/data/VoA_46.csv
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3.3.4-semiconductor-hall-effect/data/VoA_46.csv
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I_m[mA],U_34[mV]
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0,0.013
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70,0.007
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140,0.001
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300,-0.011
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430,-0.022
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570,-0.034
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740,-0.046
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900,-0.056
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1040,-0.063
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1150,-0.068
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1290,-0.072
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1400,-0.075
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1500,-0.078
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3.3.4-semiconductor-hall-effect/data/VoA_57.csv
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3.3.4-semiconductor-hall-effect/data/VoA_57.csv
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I_m[mA],U_34[mV]
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0,0.016
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70,0.01
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140,0.003
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310,-0.014
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420,-0.026
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530,-0.037
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660,-0.05
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880,-0.068
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1030,-0.077
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1160,-0.084
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1300,-0.089
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1420,-0.093
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1500,-0.096
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3.3.4-semiconductor-hall-effect/data/VoA_68.csv
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3.3.4-semiconductor-hall-effect/data/VoA_68.csv
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I_m[mA],U_34[mV]
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0,0.02
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70,0.012
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140,0.004
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250,-0.008
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350,-0.021
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470,-0.036
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590,-0.050
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710,-0.063
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840,-0.077
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950,-0.085
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1100,-0.095
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1270,-0.104
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1420,-0.110
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1500,-0.113
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3.3.4-semiconductor-hall-effect/data/VoA_79.csv
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3.3.4-semiconductor-hall-effect/data/VoA_79.csv
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I_m[mA],U_34[mV]
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0,0.024
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80,0.014
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140,0.005
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280,-0.014
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420,-0.034
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560,-0.053
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730,-0.075
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870,-0.091
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980,-0.101
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1060,-0.108
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1180,-0.116
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1270,-0.121
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1380,-0.126
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1500,-0.130
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3.3.4-semiconductor-hall-effect/data/VoA_90.csv
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3.3.4-semiconductor-hall-effect/data/VoA_90.csv
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I_m[mA],U_34[mV]
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0,0.028
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70,0.018
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140,0.007
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260,-0.012
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410,-0.037
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540,-0.057
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670,-0.077
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810,-0.097
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950,-0.113
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1080,-0.124
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1250,-0.136
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1360,-0.143
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1490,-0.150
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3.3.4-semiconductor-hall-effect/data/VoA_rev_101.csv
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3.3.4-semiconductor-hall-effect/data/VoA_rev_101.csv
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I_m[mA],U_34[mV]
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0,0.039
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70,0.049
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140,0.062
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240,0.081
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380,0.105
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550,0.136
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750,0.169
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900,0.190
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1030,0.204
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1170,0.217
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1330,0.228
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1400,0.231
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1470,0.234
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@ -0,0 +1,19 @@
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Ind[mT],I[mA]
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58,40
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110,90
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165,150
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235,220
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304,290
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363,350
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428,420
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502,490
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575,580
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648,660
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732,760
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783,830
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858,950
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893,1030
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944,1150
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990,1280
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1046,1470
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1065,1580
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16
3.3.4-semiconductor-hall-effect/data/process.md
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3.3.4-semiconductor-hall-effect/data/process.md
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## 1. Подготовка приборов к работе
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Передельный ток и напряжение через электромагнит:
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I = 1.59 А
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U = 115.6 В
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## 2. Измерение зависимости U34 от тока через магнит Im
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Ток через образец (прямое направление -- 3 в "+", 4 в "-":
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`I = [13, 24, 35, 46, 57, 68, 79, 90, 101]`
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Чтобы перевести в мА нужно умножить на 1.5/155 (цена деления 1)
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